Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium--Indium--Zinc Oxide Thin Film Transistors

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概要

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• We investigated the channel layer thickness dependence of the characteristics and stability in amorphous hafnium indium zinc-oxide (HIZO) thin film transistors (TFTs). HIZO TFTs were prepared with various channel thicknesses from 400 to 700 $Å$. In HIZO TFTs, carrier concentration is considerably high, which leads to channel layer thickness dependence. The threshold voltages of TFTs negatively shifted as the channel thickness increased. The threshold voltage shift at a high temperature is more severe in TFTs with thicker channel layers. The channel thickness dependence of the bias stability of HIZO TFTs is closely related to the back interface, rather than the bulk state.

• 2011-02-25

著者

• Han Min-koo

  Department Of Electrical Engineering Seoul National University

• Kim Sun-jae

  Department Of Advanced Materials Engineering Sejong University

• Lee Soo-yeon

  Department Of Chemistry Ewha Womans University

• Lee Woo-Geun

  Samsung Electronics Co., Ltd., San 24, Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea

• Lee Young-Wook

  Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

• Yoon Kap-Soo

  Samsung Electronics Co., Ltd., San 24, Nongseo-dong, Giheung-gu, Yongin, Gyeonggi 446-711, Korea

• Kwon Jang-Yeon

  Department of Materials Science and Engineering, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

• Han Min-Koo

  Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea

• Kim Sun-Jae

  Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

• Han Min-Koo

  Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea

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