Separated Drift Field Magmetotransistor with a p^+ Ring around an Emitter
スポンサーリンク
概要
- 論文の詳細を見る
A novel magnetotransistor using a separated drift field with a p^+ ring around an emitter has been designed and fabricated. The operating principle of the proposed magnetic field sensor is based on the emitter injection modulation. The p^+ ring around the n-type emitter confines drifted electrons in the emitter and hence, the induced Hall voltage in the emitter is increased. The measured relative sensitivity of the separated drift field magnetotransistor with the p^+ ring is about 140 times larger than that of the device without the ring.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
-
Lee S‐k
Lg Chem Ltd. Daejeon Kor
-
Han Min-koo
Department Of Electrical Engineering Seoul National University
-
Kang Uk-song
Department Of Electrical Engineering Seoul National University
-
Lee Seung-ki
Department Of Electrial Engineering Dankook University
-
Han Min-Koo
Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea
関連論文
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
- Anisotropic Bulk Etching of (110) Silicon with High Aspect Ratio
- Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
- A Novel Micromachining Technique to Fabricate Released GaAs Microstructures with a Rectangular Cross Section
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- Effects of Acupuncture at GV01 on Experimentally Induced Colitis in Rats : Possible Involvement of the Opioid System
- Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
- Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
- PMOS Thin-Film Transistors Fabricated in RTCVD Polycrystalline Silicon Germanium Films
- Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- Separated Drift Field Magmetotransistor with a p^+ Ring around an Emitter
- Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium--Indium--Zinc Oxide Thin Film Transistors
- Effect of TiO2 Antireflection Layer with Various Conductivities and Refractive Indices on Performance of Amorphous Silicon/Amorphous Silicon Germanium Tandem Solar Cells
- Effect of Channel Length on the Reliability of Amorphous Indium--Gallium--Zinc Oxide Thin Film Transistors
- Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio