PMOS Thin-Film Transistors Fabricated in RTCVD Polycrystalline Silicon Germanium Films
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
-
Kim O
Pohang Univ. Sci. And Technol. Kyungbuk Kor
-
Kim Ohyun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Kim O
Pohang Univ. Of Science And Technology
-
Chung Wook-jin
Research Institute Of Industrial Science And Technology
-
Kim H‐g
Korea Advanced Inst. Sci. And Technol. Taejon Kor
-
Lee S‐k
Lg Chem Ltd. Daejeon Kor
-
Kim Ohyun
Department Of Electrical And Electronic Engineering
-
Lee S‐k
Korea Advanced Inst. Sci. And Technol. Taejon Kor
-
KANG Bong-Koo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
KANG B.
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
KIM Hyung-Geun
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
LEE Seo-Kyu
LG Semiconductor Co. Ltd.
-
Kang Bong-koo
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Kim Hyung-geun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
関連論文
- Low-Temperature-Processed Polycrystalline Silicon Thin-Film Transistors Using Titanium Disilicide Contacts for Source and Drain
- Three-Level Charge-Pumping Technique for Grain-Boundary Trap Evaluation in Polysilicon Thin Film Transistors
- Prevention of Oxygen Incorporation in poly-Si_Ge_x Deposition with Interfacial Amorphous Silicon Layer
- Characterization of Proximity Correction in 100-nm-Regime X-Ray Lithography
- Novel Sub-10nm Polymer Thin Film Resistance Switching Device
- Identification of Grain-Boundary Trap Properties Using Three-Level Charge-Pumping Technique in Polysilicon Thin-Film Transistors
- Annealing of RuO_2 and Ru Bottom Electrodes and Its Effects on the Electrical Properties of (Ba,Sr)TiO_3 Thin Films
- Analysis of Multilayer Structure for Reflection of Extreme-Ultraviolet Wavelength
- Current and future program of EUVL in Korea
- Current and future program of EUVL in Korea
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- Dose and Shape Modification Proximity Effect Correction for Forward-Scattering Range Scale Features in Electron Beam Lithography
- PH_3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
- The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
- Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
- Low Temperature(≦550℃) CMOS Thin-Film Transistors in RTCVD Poly-Si_Ge_ Films
- Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films
- PMOS Thin-Film Transistors Fabricated in RTCVD Polycrystalline Silicon Germanium Films
- The Effects of Cd-Substitution Site on Sintering Behavior and Electrical Properties in Pb(Ni_Nb_)O_3-PbZrO_3-PbTiO_3 Ceramics
- Effects of Cd-substitution Site on PbO Evaporation in Pb(Ni_Nb_)O_3-PbZrO_3-PbTiO_3 Ceramics
- Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of (Ba,Sr)TiO_3 Thin Films
- Pt/RuO_2 Hybrid Bottom Electrodes and Their Effects on the Electrical Properties of (Ba, Sr)TiO_3 Thin Films
- Domain Reorientation Effects on the Temperature Dependence of Piezoelectric Properties in Pb(Zn_Nb_)O_3-PbTiO_3-PbZrO_3 Ceramics
- Effect of Source/Drain Doping Gradient on Threshold Voltage Variation in Double-Gate Fin Field Effect Transistors as Determined by Discrete Random Doping
- Embedded Touch Sensing Circuit Using Mutual Capacitance for Active-Matrix Organic Light-Emitting Diode Display
- Separated Drift Field Magmetotransistor with a p^+ Ring around an Emitter
- Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films
- Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current Controller
- Computer Design of Source/Drain Extension Region Profile and Spacer Length in Tri-Gate Body-Tied Fin Field-Effect Transistors with High-$k$ Gate Dielectrics
- Process Optimization for Synthesis of High-Quality Graphene Films by Low-Pressure Chemical Vapor Deposition (Special Issue : Microprocesses and Nanotechnology)
- Effects of Geometrical Fin Parameters on Transfer Characteristics in Triple-Gate Fin Field Effect Transistors
- Optimized Multigrid Strategy for Accurate Flare Modeling with Three-Dimensional Mask Effect in Extreme-Ultraviolet Lithography
- Driving Method Compensating for the Hysteresis of Polycrystalline Silicon Thin-Film Transistors for Active-Matrix Organic Light-Emitting Diode Displays
- Novel Digital Driving Method Using Dual Scan for Active Matrix Organic Light-Emitting Diode Displays
- Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications
- Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films
- Dose and Shape Modification Proximity Effect Correction for Forward-Scattering Range Scale Features in Electron Beam Lithography