PH_3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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Kim O
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Hong Sang-hyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Song Joo-kyung
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim Ohyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim K‐s
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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KIM Ki-Soo
Electrical and Computer Engineering Division, Pohang University of Science and Technology
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YANG Moon-Seok
Electrical and Computer Engineering Division, Pohang University of Science and Technology
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- The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
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- PH3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process