Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
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概要
- 論文の詳細を見る
A recoverable residual image is observed and analyzed in voltage driven active matrix organic light emitting diode (AMOLED) displays of which pixel circuits consist of two thin film transistors (TFTs) and one capacitor. The cause of the residual image is proven to be the hysteresis of the driving TFT in the pixel. The hysteresis of the p-channel TFT can be explained by hole trapping and de-trapping at the interface region of the channel. The recovery time of the residual image also strongly depends on the hysteresis level. We have found that the residual image can be eliminated by reducing the hysteresis level of TFTs.
- 2004-04-01
著者
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Kim Ohyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Ha Yong-min
P-si Development Croup Lg. Philips Lcd Co. Ltd.
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Chung Hoon-ju
P-si Development Croup Lg. Philips Lcd Co. Ltd.
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Chang Jae-won
P-si Development Croup Lg. Philips Lcd Co. Ltd.
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Kim Byeong-koo
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Ha Yong-Min
P-Si Development Group, LG.Philips LCD Co., Ltd., Gumi, Kyungbuk 730-726, Republic of Korea
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Chung Hoon-Ju
P-Si Development Group, LG.Philips LCD Co., Ltd., Gumi, Kyungbuk 730-726, Republic of Korea
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Chang Jae-Won
P-Si Development Group, LG.Philips LCD Co., Ltd., Gumi, Kyungbuk 730-726, Republic of Korea
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Kim Byeong-Koo
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
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Kim Ohyun
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
関連論文
- Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
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- Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
- PH3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process