Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2004-04-01

著者

• Kim Ohyun

  Electrical And Computer Engineering Division Pohang University Of Science And Technology

• KIM Byeong-Koo

  Electrical and Computer Engineering Division, Pohang University of Science and Technology

• CHUNG Hoon-Ju

  P-Si Development Croup, LG. Philips LCD Co., Ltd.

• CHANG Jae-Won

  P-Si Development Croup, LG. Philips LCD Co., Ltd.

• HA Yong-Min

  P-Si Development Croup, LG. Philips LCD Co., Ltd.

• Ha Yong-min

  P-si Development Croup Lg. Philips Lcd Co. Ltd.

関連論文

• Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
• Effects of Self-Aligned Field Induced Drain with Double Spacer on the Characteristics of Pol-Si TFT (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
• Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process
• Effects of Self-Aligned Field Induced Drain with Double Spacer on the Characteristics of Pol-Si TFT(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
• PH_3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
• The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
• The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
• Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
• PH3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
• Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process

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