Kim Ohyun | Electrical And Computer Engineering Division Pohang University Of Science And Technology
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関連著者
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Kim Ohyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Ahn Jeong-ah
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Song Joo-kyung
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim O
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Kim K‐s
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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KIM Ki-Soo
Electrical and Computer Engineering Division, Pohang University of Science and Technology
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Kim Ki-soo
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim O
Pohang Univ. Of Science And Technology
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Hong Sang-hyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Ha Yong-min
P-si Development Croup Lg. Philips Lcd Co. Ltd.
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KIM Byeong-Koo
Electrical and Computer Engineering Division, Pohang University of Science and Technology
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CHUNG Hoon-Ju
P-Si Development Croup, LG. Philips LCD Co., Ltd.
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CHANG Jae-Won
P-Si Development Croup, LG. Philips LCD Co., Ltd.
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HA Yong-Min
P-Si Development Croup, LG. Philips LCD Co., Ltd.
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YANG Moon-Seok
Electrical and Computer Engineering Division, Pohang University of Science and Technology
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Chung Hoon-ju
P-si Development Croup Lg. Philips Lcd Co. Ltd.
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Chang Jae-won
P-si Development Croup Lg. Philips Lcd Co. Ltd.
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Yang Moon-seok
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim Byeong-koo
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Ha Yong-Min
P-Si Development Group, LG.Philips LCD Co., Ltd., Gumi, Kyungbuk 730-726, Republic of Korea
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Song Joo-Kyung
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Republic of Korea
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Hong Sang-Hyun
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Republic of Korea
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Kim Ki-Soo
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Republic of Korea
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Chung Hoon-Ju
P-Si Development Group, LG.Philips LCD Co., Ltd., Gumi, Kyungbuk 730-726, Republic of Korea
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Yang Moon-Seok
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Republic of Korea
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Chang Jae-Won
P-Si Development Group, LG.Philips LCD Co., Ltd., Gumi, Kyungbuk 730-726, Republic of Korea
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Kim Byeong-Koo
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
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Ahn Jeong-Ah
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
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Kim Ohyun
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk, 790-784, Republic of Korea
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Kim Ohyun
Electrical and Computer Engineering Division, Pohang University of Science and Technology, Pohang, Kyungbuk 790-784, Republic of Korea
著作論文
- Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
- Effects of Self-Aligned Field Induced Drain with Double Spacer on the Characteristics of Pol-Si TFT (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process
- Effects of Self-Aligned Field Induced Drain with Double Spacer on the Characteristics of Pol-Si TFT(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- PH_3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
- The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
- Recoverable Residual Image Induced by Hysteresis of Thin Film Transistors in Active Matrix Organic Light Emitting Diode Displays
- PH3 Ion Shower Implantation and Rapid Thermal Anneal with Oxide Capping and Its Application to Source and Drain Formation of a Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor
- Influence of Field-Induced Drain on the Characteristics of Poly-Si Thin-Film Transistor using a Self-Aligned Double Spacer Process