The Dopant Diffusion Characteristics of the PH_3 Ion Shower Implantation (ISI) and RTA with Oxide Capping for SOI(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 20
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概要
- 論文の詳細を見る
The PH_3 ISI and the RTA are examined for applying to the S/D of FD SOI MOSFETs. The lower sheet resistance and less dopant diffusion is achieved by reducing the thermal budget with oxide capping prior to RTA, compared to the RTA without oxide capping. We extract the dopant lateral diffusion length and the lateral abruptness experimentally for a 40nm thick SOI from the electrical characteristics of a FD SOI MOSFET. Under the RTA condition of 900℃ 2Osec with oxide capping, the sheet resistance, the lateral diffusion length and the lateral abruptness for a 40nm thick SOI are 250Ω/sq, 33〜35nm and 5.4〜5.Tnm/dec.
- 社団法人電子情報通信学会の論文
- 2004-06-23
著者
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Kim O
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Kim O
Pohang Univ. Of Science And Technology
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Song Joo-kyung
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim Ohyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim K‐s
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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KIM Ki-Soo
Electrical and Computer Engineering Division, Pohang University of Science and Technology
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Kim Ki-soo
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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