Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Kim O

  Pohang Univ. Sci. And Technol. Kyungbuk Kor

• Kim Ohyun

  Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Chung Wook-jin

  Research Institute Of Industrial Science And Technology

• Kim H‐g

  Korea Advanced Inst. Sci. And Technol. Taejon Kor

• LEE Seo-Kyu

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology (PO

• Lee S‐k

  Korea Advanced Inst. Sci. And Technol. Taejon Kor

• KANG Bong-Koo

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology

• KIM Hyung-Geun

  Department of Electronic and Electrical Engineering, Pohang University of Science and Technology

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• Low Temperature (≤550℃) Fabrication of CMOS TFT's on Rapid-Thermal CVD Polycrystalline Silicon-Germanium Films
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• Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films
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• Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films

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