Fabrication of P-Channel MOS TFT's on Rapid Thermal CVD Polycrystalline Silicon-Germanium Films
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概要
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P-channel metal-oxide-semiconductor (PMOS) thin-film transistors (TFT's) have been fabricated on rapid thermal chemical vapor deposition (RTCVD) polycrystalline silicon-germanium (poly-Si0.82Ge0.18) films for the first time. The transistors with a channel length of 1.5 µm exhibit good electrical characteristics. The device performance is degraded in proportion to oxygen content, based on measurements using secondary ion mass spectrometry (SIMS). After electron cyclotron resonance (ECR) plasma hydrogenation under optimal conditions, the density of trap states is markedly decreased in short-channel devices, resulting in relatively low leakage current (∼12.1pA/µm) and high field-effect hole mobility (∼13.4cm2/V·s).
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Chung Wook-jin
Research Institute Of Industrial Science And Technology
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Kim Ohyun
Department Of Electrical And Electronic Engineering
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Lee Seo-kyu
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Kang Bong-koo
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Kim Hyung-geun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Kim Hyung-Geun
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology,
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Chung Wook-Jin
Research Institute of Industrial Science and Technology, Korea
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Lee Seo-Kyu
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology,
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Kang Bong-Koo
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology,
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