Prevention of Oxygen Incorporation in poly-Si_<1-x>Ge_x Deposition with Interfacial Amorphous Silicon Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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Kim Ohyun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Park Young-bae
Laboratory For Advanced Materials Processing (lamp) Department Of Chemical Engineering Pohang Univer
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Kim Ohyun
Department Of Electrical And Electronic Engineering
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Kim Ohyun
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology (pos
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LEE Seo-Kyu
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology (PO
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RHEE Shi-Woo
Laboratory for Advanced Materials Processing (LAMP), Department of Chemical Engineering, Pohang Univ
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Lee S‐k
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology (pos
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Rhee S‐w
Pohang Univ. Sci. And Technol. Pohang Kor
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Lee Seo-kyu
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
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Rhee Shi-woo
Laboratory For Advanced Materials Processing (lamp) Department Of Chemical Engineering Pohang Univer
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