Unipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Films
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概要
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This paper describes the fabrication and electric characteristics of nonvolatile memory devices from a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) thin film sandwiched between two Al electrodes. These devices have unipolar switching behavior. The on and off voltages are about 2–3 and 0.5 V, respectively. The on/off current ratio of the device is $10^{4}$–$10^{9}$. Also, the write–erase cycle test was operated 27 times and the retention time was up to 6 h. These characteristics were affected by several factors, such as the formation of current paths due to the redox behavior of PEDOT:PSS chain, the application of the compliance current and the existence of the native thin oxide layer, Al2O3, on top of the Al bottom electrode.
- 2009-04-25
著者
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Kim Ohyun
Department Of Electrical And Electronic Engineering
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Ha Heonjun
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
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