Unipolar Memory Operation of Resistance Random-Access Memory Using Compliance Current Controller
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概要
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In this paper, we investigate the effect of temperature on the unipolar switching characteristics of a resistance random-access memory (RRAM) that uses poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films. The set voltage required for a transition from an off-state to an on-state was found to decrease as the temperature of the RRAM increases. This phenomenon is explained by the formation of filaments caused by the Joule heating effect. We propose a new method of controlling the compliance current for unipolar switching, demonstrating that the PEDOT:PSS-based RRAM can perform reproducible “write–read–erase–read” cyclic unipolar memory operations for nonvolatile memory application.
- 2009-04-25
著者
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Kim Ohyun
Department Of Electrical And Electronic Engineering
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Kim Mijung
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
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Park Boongik
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea
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