Effects of Self-Aligned Field Induced Drain with Double Spacer on the Characteristics of Pol-Si TFT (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
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概要
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The electric characteristics of Field Induced Drain (FID) poly-Si thin film transistors (poly-Si TFT's) with an independently biased self-aligned sub gate using a double space process are investigated. The FID poly-Si TFT reduced the off-state leakage and enlarged the on/off current ratio compared with conventional and LDD (Lightly Doped Drain) TFTs. The self-aligned double spacer process removed the sub gate misalignment error and the length of the sub gate can be easily controlled by poly-Si thickness and hard mask. As the effective sub gate length is increased, the drive current is decreased. However, the optimum sub gate length and voltage are investigated with the on/off state currents and the hot carrier degradation effects.
- 社団法人電子情報通信学会の論文
- 2003-06-23
著者
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Ahn Jeong-ah
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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Kim Ohyun
Electrical And Computer Engineering Division Pohang University Of Science And Technology
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