Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio

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概要

• 論文の詳細を見る
• 1996-02-01

著者

• Park C‐m

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Min B‐h

  School Of Electrical Engineeririg Seoul National University

• Min Byung-hyuk

  Department Of Electrical Engineering Seoul National University

• Han Min-koo

  Department Of Electrical Engineering Seoul National University

• Park Cheol-min

  Department Of Electrical Engineering University Of California

関連論文

• Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
• New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
• A Characteristics of Buried Channel Poly-Si TFTs
• In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
• Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
• Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
• Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
• Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
• Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
• In-Situ Doped CMOS Polysilicon Thin Film Transistors
• Polysilicon Thin Film Transistors with PN Junction Gate
• Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
• A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
• Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
• A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
• Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
• Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
• A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
• Separated Drift Field Magmetotransistor with a p^+ Ring around an Emitter
• Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium--Indium--Zinc Oxide Thin Film Transistors
• Modeling of the Series Resistance for Below 100nm MOSFET Regime
• Effect of Channel Length on the Reliability of Amorphous Indium--Gallium--Zinc Oxide Thin Film Transistors
• Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio

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