Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio
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概要
- 論文の詳細を見る
We have proposed and fabricated novel polycrystalline silicon thin film transistors (poly-Si TFTs) to have the properties of an offset gated structure in OFF state, while acting as a non-offset structure in ON state. The fabrication process is compatible with the conventional non-offset poly-Si TFT process and does not require any additional photolithographic step. Our experimental results show that the leakage current of the new device is two orders of magnitude lower than that of the non-offset device, while the ON current of the new device is almost identical with that of the non-offset device. Compared with the conventional device, it is found that the leakage current increase slowly with the negative gate voltage decrease and the ON/OFF current ratio is improved remarkably.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Min Byung-hyuk
Department Of Electrical Engineering Seoul National University
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Park Cheol-min
Department Of Electrical Engineering University Of California
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Han Min-Koo
Department of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea
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Min Byung-Hyuk
Department of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Han Min-Koo
Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea
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