Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

概要

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For the fabrication of a low-cost and transparent amorphous InGaZnO (a-IGZO) thin film transistor (TFT), the possibility of using semiconducting and conducting, a-IGZO films as the channel and source/drain (S/D) electrode layers, respectively, was investigated, as was their effect on the device performance. Although the a-IGZO S/D electrodes' transistor performance was somewhat degraded, possibly due to the <i>ex-situ</i> integration process, acceptable TFT characteristics and transparency were obtained for the next-generation, transparent active matrix displays. The post-fabrication annealing ambient significantly affected the electrical properties of the a-IGZO S/D and channel layers, as the carrier concentration exhibited a close dependency on the amount of oxygen in the annealing ambient.
2011-09-25