New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current

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概要

• 論文の詳細を見る
• 1997-09-16

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park C‐m

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Kim Chun-hong

  School Of Electrical Engineering Seoul National University

• Kim C‐h

  Korea Advanced Inst. Sci. And Technol. Daejeon Kor

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• JEON Jae-Hong

  The author is with the School of Electrical Engineering, Seoul National University

• Jeon Jae-Hong

  School of Electrical Engineering, Seoul National University

• Han Min-Koo

  School of Electrical Engineering, Seoul National University

• KIM Cheon-Hong

  School of Electrical Engineering, Seoul National University

• YOO Juhn-Suk

  School of Electrical Engineering, Seoul National University

• PARK Cheol-Min

  School of Electrical Engineering, Seoul National University

• Kim C‐h

  Seoul National Univ. Seoul Kor

• Jeon J‐h

  Seoul National Univ. Seoul Kor

• Yoo Juhn-suk

  The Author Is With The School Of Electrical Engineering Seoul National University

• Kim Cheon-hong

  School Of Electrical Engineering Seoul National University

• Han Min-koo

  School Of Electrical Engineering And Computer Science #50 Seoul National University

• Park Cheol-min

  School Of Electrical Engineering Seoul National University

• Jun Jae-hong

  Department Of Electrical Engineering Seoul National University

• Jun Jae

  School Of Electrical Engineeririg Seoul National University

• Yoo Juhn-suk

  Department Of Electrical Engineering Seoul National University

• Yoo Juhn

  School Of Electrical Engineeririg Seoul National University

• Han Min-koo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

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