Jeon J‐h | Seoul National Univ. Seoul Kor

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著作論文

New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
A Characteristics of Buried Channel Poly-Si TFTs
Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
Self-Induced Transparency in Samarium Atomic Vapor under Condition of High Temperature and High Density
Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
Ring Dark Solitary Waves on a Gaussian Background Beam

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