Park K‐c | Lg Electronics Inc. Seoul Kor

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著作論文

New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
Methods of Achieving Compatibility between High-Density Disk and Digital Versatile Disk Using a Bi-aspherical Singlet and a Wavefront Compensation Element
A Nonlinearity Compensated Channel Model and Partial Response Maximum Likelihood(PRML) Simulator for the High Density Optical Disc
A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio

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