Yoo Juhn-suk | Department Of Electrical Engineering Seoul National University
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概要
関連著者
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Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
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Han M‐k
Seoul Nat'l Univ. Seoul Kor
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Yoo Juhn-suk
The Author Is With The School Of Electrical Engineering Seoul National University
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Yoo Juhn-suk
Department Of Electrical Engineering Seoul National University
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Yoo Juhn
School Of Electrical Engineeririg Seoul National University
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JEON Jae-Hong
The author is with the School of Electrical Engineering, Seoul National University
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Jeon J‐h
Seoul National Univ. Seoul Kor
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Jun Jae-hong
Department Of Electrical Engineering Seoul National University
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Jun Jae
School Of Electrical Engineeririg Seoul National University
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Park C‐m
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kim Chun-hong
School Of Electrical Engineering Seoul National University
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Kim Cheon-hong
School Of Electrical Engineering Seoul National University
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Park Cheol-min
School Of Electrical Engineering Seoul National University
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical Engineering, Seoul National University
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YOO Juhn-Suk
School of Electrical Engineering, Seoul National University
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Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Min B‐h
School Of Electrical Engineeririg Seoul National University
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Choi K‐y
Seoul National Univ. Seoul Kor
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KIM Cheon-Hong
School of Electrical Engineering, Seoul National University
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PARK Cheol-Min
Room 1102, School of Electrical Engineering, Seoul National University
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YOO Juhn-Suk
Room 1102, School of Electrical Engineering, Seoul National University
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HAN Min-Koo
Room 1102, School of Electrical Engineering, Seoul National University
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Park Cheol-min
Room 1102 School Of Electrical Engineering Seoul National University
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Choi Hong-seok
School Of Electrical Engineering Seoul National University
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Jeon Jae-Hong
School of Electrical Engineering, Seoul National University
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PARK Kee-Chan
School of Electrical Engineering, Seoul National University
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MIN Byung-Hyuk
Room 1102, School of Electrical Engineering, Seoul National University
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Park K‐c
Lg Electronics Inc. Seoul Kor
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Choi Hong-seok
Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te
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Park Kee-chan
School Of E1ectrical Engineering Seoul National University
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Choi Kwon-Young
School of Chemical and Biological Engineering, Institute of Molecular Biology and Genetics, Institut
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JEON Jae-Hong
Room 1102, School of Electrical Engineering, Seoul National University
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PARK Cheol-Min
School of Electrical Engineering, Seoul National University
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Han Min-koo
Department Of Electrical Engineering Seoul National University
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CHOI Kwon-Young
Department of Electrical Engineering, Seoul National University
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YOO Juhn-Suk
Department of Electrical Engineering, Seoul National University
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KIM Yong-Sang
Department of Electrical Engineering, Myongji University
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Kim Yong-sang
Department Of Electrical Engineering Myongji University
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Choi Kwon-young
School Of Chemical And Biological Engineering Institute Of Molecular Biology And Genetics Institute
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Choi Kwon-young
Department Of Electrical Engineering Seoul National University
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Han Min-Koo
Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea
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Kim Yong-Sang
Department of Electrical Engineering and Nano-Bio Reaserch Center, Myongji University, Gyeonggi 449-728, Korea
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Kim C‐h
Korea Advanced Inst. Sci. And Technol. Daejeon Kor
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LEE Min-Cheol
The author is with the School of Electrical Engineering, Seoul National University
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YOO Juhn-Suk
The author is with the School of Electrical Engineering, Seoul National University
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HAN Min-Koo
The author is with the School of Electrical Engineering, Seoul National University
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Lee Min-Cheol
School of Electrical Engineering, Seoul National University
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KIM Cheon-Hong
Room 1102, School of Electrical Engineering, Seoul National University
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CHOI Hong-Seok
Room 1102, School of Electrical Engineering, Seoul National University
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MIN Byung-Hyuk
School of Electrical Engineering, Seoul National University
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Bae Byung-Sung
Samsung Electronics Co. Ltd
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Yoo Juhn
School of Electrical Engineeririg, Seoul National University
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Jun Jae
School of Electrical Engineeririg, Seoul National University
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Han Min
School of Electrical Engineeririg, Seoul National University
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MOON Dae-Kyu
LG R&D Center
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Kim C‐h
Seoul National Univ. Seoul Kor
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Han Min
School Of Electrical Engineering Seoul National University
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Lee M‐c
Seoul National Univ. Seoul Kor
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CHOI Hong-seok
Department of Electrical Engineering, Seoul National University
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LIM In-Gon
LG Electronics Research Center
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Lee Min-cheol
The Author Is With The School Of Electrical Engineering Seoul National University
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Han Min-koo
The Author Is With The School Of Electrical Engineering Seoul National University
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Moon Dae-kyu
Lg R&d Center
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Jeon Jae-hong
The Author Is With The School Of Electrical Engineering Seoul National University
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Jun Jae
School Of Biomedical Engineering College Of Biomedical And Health Science Research Institute Of Biom
著作論文
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors