New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)

スポンサーリンク

概要

• 論文の詳細を見る

• We have proposed and fabricated a new poly-Si TFT employing the selectively doped regions in the active layer. In the proposed poly-Si TFTs, the selectively doped regions where doping concentration is identical to that of the source/drain, reduce the effective channel length during the on-state. Under the off-state, the selectively doped regions may reduce the lateral electric field induced near the drain and reduce the leakage current considerably. The experimental data of the proposed TFT exhibit high on-current, low leakage current and low threshold voltage. The fabrication of the proposed TFT is rather simple ; the required steps for the proposed TFT are reduced because high dosage ion-implantation for the source/drain and the selectively doped regions is performed simultaneously prior to excimer laser irradiation step.

• 社団法人電子情報通信学会の論文
• 2000-10-25

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• LEE Min-Cheol

  The author is with the School of Electrical Engineering, Seoul National University

• JEON Jae-Hong

  The author is with the School of Electrical Engineering, Seoul National University

• YOO Juhn-Suk

  The author is with the School of Electrical Engineering, Seoul National University

• HAN Min-Koo

  The author is with the School of Electrical Engineering, Seoul National University

• Lee Min-Cheol

  School of Electrical Engineering, Seoul National University

• Jeon J‐h

  Seoul National Univ. Seoul Kor

• Yoo Juhn-suk

  The Author Is With The School Of Electrical Engineering Seoul National University

• Lee M‐c

  Seoul National Univ. Seoul Kor

• Lee Min-cheol

  The Author Is With The School Of Electrical Engineering Seoul National University

• Han Min-koo

  The Author Is With The School Of Electrical Engineering Seoul National University

• Jun Jae-hong

  Department Of Electrical Engineering Seoul National University

• Jeon Jae-hong

  The Author Is With The School Of Electrical Engineering Seoul National University

• Jun Jae

  School Of Electrical Engineeririg Seoul National University

• Yoo Juhn-suk

  Department Of Electrical Engineering Seoul National University

• Yoo Juhn

  School Of Electrical Engineeririg Seoul National University

• Han Min-koo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

関連論文

• New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
• A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
• New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
• New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
• Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
• Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
• Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
• Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
• Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
• New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
• A Characteristics of Buried Channel Poly-Si TFTs
• In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
• A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
• Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
• Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
• Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
• Self-Induced Transparency in Samarium Atomic Vapor under Condition of High Temperature and High Density
• A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
• Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
• Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
• SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
• New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
• A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
• A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
• SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
• A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
• A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
• Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
• New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
• A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
• Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
• Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
• A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
• AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
• A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
• Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
• A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
• Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
• Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
• Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
• In-Situ Doped CMOS Polysilicon Thin Film Transistors
• Polysilicon Thin Film Transistors with PN Junction Gate
• Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
• Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
• A New Dual-Gate SOI LIGBT with the Shorted Anode
• A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
• A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
• Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
• A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
• Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
• A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
• A New Junction Termination in Power Semiconductor Devices employing Trench
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
• Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
• A Hybrid Lateral SOI BMFET with High Current Gain
• Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
• Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
• Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
• Ring Dark Solitary Waves on a Gaussian Background Beam
• The effect of interface trap charges on poly-Si TFT
• The effect of interface trap charges on poly-Si TFT
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A New Junction Termination in Power Semiconductor Devices employing Trench
• A New Gate-Overlapped LDD Poly-Si Thin Film Transistors
• Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
• A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
• Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
• A New Poly-Si TFT Employing Air-Cavities at the Edge of Gate Oxide Reducing Gate Induced Drain Leakage Current (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• A New Poly-Si TFT Employing Air-Cavities at the Edge of Gate Oxide Reducing Gate Induced Drain Leakage Current
• Active-Matrix Organic Light Emission Diode Pixel Circuit for Suppressing and Compensating for the Threshold Voltage Degradation of Hydrogenated Amorphous Silicon Thin Film Transistors
• Effect of Ga Doping on Transparent and Conductive Al-Doped ZnO Films Prepared Using Magnetron Cosputtering
• Novel L-Shaped Dual-Gate Structure of Polycrystalline Silicon Thin-Film Transistors for the Reduction of the Kink Current in Sequential Lateral Solidification or Continuous Wave Laser Method
• A Substrate Bias Effect on Recovery of the Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors
• New Current-Scaling Pixel Circuit Compensating Non uniform Electrical Characteristics for Active Matrix Organic Light Emitting Diode
• Hydrogenated Microcrystalline Silicon Film Growth by Inductively Coupled Plasma–Chemical Vapor Deposition on ZrO2 Gate Dielectric for Thin Film Transistors
• New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane
• Kink Suppression Improvement of Polycrystalline Silicon Thin-Film Transistors Employing Asymmetric Dual-Gate Design
• Time-Domain Quaternary-Weighted Pulse Width Modulation Driving Method for Active Matrix Organic Light-Emitting Diode Displays
• High-Aperture Pixel Design Employing $V_{\text{DD}}$ Line Elimination for Active Matrix Organic Light Emitting Diode Display
• Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
• A New Trenched Source Power MOSFET Improving Avalanche Energy
• Touch-Sensitive Active-Matrix Display with Liquid-Crystal Capacitance Detector Arrays
• A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit
• Lateral Diffusion of Phosphorous Induced by Excimer Laser Irradiation of Silicon Thin Film for Formation of Gradual Lightly Doped Region in Polycrystalline Silicon Thin Film Transistors

もっと見る 閉じる

スポンサーリンク