Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
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Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Y‐i
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Jo William
Department Of Physics Ewha Womans University
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Han M‐k
Seoul Nat'l Univ. Seoul Kor
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Han Min-Koo
School of Electrical Engineering, Seoul National University
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Han Min-koo
School Of Electrical Engineering Seoul National University
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Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
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JI In-Hwan
School of Electrical Eng., Seoul Nat'l Univ.
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CHO Kyu-Heon
School of Electrical Eng., Seoul Nat'l Univ.
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CHOI Young-Hwan
School of Electrical Eng., Seoul Nat'l Univ.
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LIM Jiyong
School of Electrical Eng. & Computer Science #50, Seoul National University
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LEE Jihye
Department of Physics, Ewha Womans University
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Lim Ji-yong
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Yearn-ik
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Cho Kyu-heon
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Lee Jihye
Department Of Pharmacy Daegu Catholic Univ. Medical Center
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Lee Jihye
Department Of Physics Ewha Womans University
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Ji In-hwan
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Lim Jiyong
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Young-hwan
School Of Electrical Eng. Seoul Nat'l Univ.
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Young-hwan
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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