A new 1200V punch through-insulated gate bipolar transistor with protection circuit employing lateral insulated gate bipolar transistor and floating p-well voltage sensing scheme (Special issue: Solid state devices and materials)
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
関連論文
- A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
- Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
- Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
- SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
- New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
- A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
- A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
- SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
- A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
- A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
- A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
- Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
- A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
- Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
- A New Dual-Gate SOI LIGBT with the Shorted Anode
- A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
- A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
- A new 1200V punch through-insulated gate bipolar transistor with protection circuit employing lateral insulated gate bipolar transistor and floating p-well voltage sensing scheme (Special issue: Solid state devices and materials)
- A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
- A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor (Special Issue: Solid State Devices & Materials)
- Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact (Special Issue: Solid State Devices & Materials)
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
- Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
- A Hybrid Lateral SOI BMFET with High Current Gain
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A New Junction Termination in Power Semiconductor Devices employing Trench