SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Ha Min-woo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Choi Y‐i

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• Lim Jiyong

  School Of Electrical Eng. & Computer Science #50 Seoul National University

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