Choi Y‐i | School Of Electrical Eng. & Computer Science #50 Seoul National University

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概要

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著作論文

A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
A New Dual-Gate SOI LIGBT with the Shorted Anode
A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
A new 1200V punch through-insulated gate bipolar transistor with protection circuit employing lateral insulated gate bipolar transistor and floating p-well voltage sensing scheme (Special issue: Solid state devices and materials)
A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor (Special Issue: Solid State Devices & Materials)
Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact (Special Issue: Solid State Devices & Materials)
Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
A New Junction Termination in Power Semiconductor Devices employing Trench
A New Lateral Dual-Gate Thyristor with Current Saturation
A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
A Hybrid Lateral SOI BMFET with High Current Gain
A New Lateral Dual-Gate Thyristor with Current Saturation
A New Junction Termination in Power Semiconductor Devices employing Trench

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