A New Junction Termination in Power Semiconductor Devices employing Trench
スポンサーリンク
概要
- 論文の詳細を見る
We have proposed a new junction termination method by employing a shallow oxide trench in order to decrease the junction termination area without sacrificing the breakdown voltage characteristics of the power semiconductor devices. The proposed trench floating field-limiting ring structure decrease the total junction termination area by reducing the space between field-limiting rings (FLR). Reduced space can be obtained due to reduced lateral diffusion region and lower dielectric constant of the silicon dioxide. Our simulations results show that the total junction termination area is considerably decreased with same breakdown voltage condition. Junction termination area of 600V rated device is decreased by 20% compared with that of the conventional FLR structure.
- 社団法人電子情報通信学会の論文
- 2002-06-24
著者
-
Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
-
Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Choi Y‐i
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Han M‐k
Seoul Nat'l Univ. Seoul Kor
-
Han Min-Koo
School of Electrical Engineering, Seoul National University
-
Oh J‐k
Seoul National Univ. Seoul Kor
-
Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
-
SEO Kwang-Seok
School of Electrical Engineering, Seoul National University
-
CHOI Yearn-Ik
College of Electronics Eng., Ajou University
-
OH Jae-Keun
School of Electrical Engineering #50, Seoul National University
-
Choi Yearn-ik
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Oh Jae-keun
School Of Electrical Eng. #50 Seoul National University
-
Seo K‐s
Seoul Nat'l Univ. Eecs/ee
-
Seo Kwang-seok
School Of Electrical Engineering And Computer Science Seoul National University
-
Seo Kwang-seok
Seoul Nat'l Univ. Eecs/ee
-
Choi Young-hwan
School Of Electrical Eng. Seoul Nat'l Univ.
-
Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
-
Seo Kwang-Seok
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
関連論文
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
- Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
- Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
- SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
- New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
- A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
- A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
- SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
- A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
- A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
- New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
- A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
- Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
- Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
- A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
- A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
- Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
- A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
- The High Temperature Thermally Treated SiN_x Passivation of AlGaN/GaN HEMT using Remote PECVD
- Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
- In-Situ Doped CMOS Polysilicon Thin Film Transistors
- Polysilicon Thin Film Transistors with PN Junction Gate
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
- Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
- A New Dual-Gate SOI LIGBT with the Shorted Anode
- A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
- Second Breakdown of 18V Grounded Gate NMOS induced by the Kirk Effect under Electrostatic Discharge
- A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
- Post-annealing Effects on the Characteristics of Poly-Si TFT's
- Post-annealing Effects on the Characteristics of Poly-Si TFT's
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
- A new 1200V punch through-insulated gate bipolar transistor with protection circuit employing lateral insulated gate bipolar transistor and floating p-well voltage sensing scheme (Special issue: Solid state devices and materials)
- A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
- A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor (Special Issue: Solid State Devices & Materials)
- Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact (Special Issue: Solid State Devices & Materials)
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
- Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
- A Hybrid Lateral SOI BMFET with High Current Gain
- Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
- The Space Charge Effect on the Discharge Current in Cross-Linked Polyethylene under High AC Voltages
- The effect of interface trap charges on poly-Si TFT
- The effect of interface trap charges on poly-Si TFT
- 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Trenched Source Power MOSFET Improving Avalanche Energy
- 30nm Triple-Gate In_GaAs HEMTs Fabricated by Damage-Free SiO_2/SiN_x Sidewall Process and BCB Planarization
- A New Gate-Overlapped LDD Poly-Si Thin Film Transistors
- A Compact Ultrawide Bandpass Filter on Thin-Film Substrate(Recent Technologies for Microwave and Millimeter-wave Passive Devices)
- Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- A Flip-Chip Assembled Millimeter-Wave Oscillator Stabilized with a Micromachined Cavity on a Thin-Film Substrate
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
- New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
- AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
- A New Poly-Si TFT Employing Air-Cavities at the Edge of Gate Oxide Reducing Gate Induced Drain Leakage Current (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Poly-Si TFT Employing Air-Cavities at the Edge of Gate Oxide Reducing Gate Induced Drain Leakage Current
- A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
- 30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization
- An Improved Junction Termination Design Employing Shallow Trenches and Field Limiting Rings for Power Devices
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- A New Trenched Source Power MOSFET Improving Avalanche Energy
- A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit
- New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN High Electron Mobility Transistors
- A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor
- SiO2 Passivation Effects on the Leakage Current in AlGaN/GaN High-Electron-Mobility Transistors Employing Additional Schottky Gate