The High Temperature Thermally Treated SiN_x Passivation of AlGaN/GaN HEMT using Remote PECVD
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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HER Jin-Cherl
School of Electrical Engineering, Seoul National University
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HER Jin-Cherl
Seoul Nat'l Univ., EECS/EE
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OH Jae-Eung
Hanyang Univ. EECS/EE
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SEO Kwang-Seok
Seoul Nat'l Univ., EECS/EE
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KIM Dong-Hwan
Seoul Nat'l Univ., EECS/EE
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KIM Sung-Won
Seoul Nat'l Univ., EECS/EE
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JANG Kyoung-Chul
Seoul Nat'l Univ., EECS/EE
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LEE Jae-Hak
THELEDS Co., LTD.
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Kim Sung-won
Seoul Nat'l Univ. Eecs/ee
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Lee Jae-hak
Theleds Co. Ltd.
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Jang Kyoung-chul
Seoul Nat'l Univ. Eecs/ee
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Her Jin-cherl
Seoul Nat'l Univ. Eecs/ee
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Kim Dong-hwan
Seoul Nat'l Univ. Eecs/ee
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Seo Kwang-seok
Seoul Nat'l Univ. Eecs/ee
関連論文
- SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
- Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
- A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
- Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
- A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
- The High Temperature Thermally Treated SiN_x Passivation of AlGaN/GaN HEMT using Remote PECVD
- Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
- A New Junction Termination in Power Semiconductor Devices employing Trench
- Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A Compact Balanced Filter on Thin Film Substrate for mm Wave application
- Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum
- SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition
- High-Q Resonator on Thin-Film Substrate for mm-wave System-on-Package (SOP)
- Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
- New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates