SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition
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概要
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The surface of AlGaN/GaN high-electron-mobility transistors (HEMTs) tends to be easily damaged during device fabrication, especially during high-temperature annealing. In order to resolve this problem, a prepassivation process was developed using remote-mode plasma-enhanced chemical vapor deposition (RPECVD) systems. It is important in the prepassivation process to protect the region under the gate during high-temperature ohmic annealing and utilize a low-damage SiNx etching process to minimize any surface damage. It was observed that the DC characteristics were significantly improved and the current collapse phenomenon was markedly suppressed for AlGaN/GaN HEMTs by employing the prepassivation process proposed in this work in comparison with a conventional process. According to the experimental results, the prepassivation process coupled with a gate field plate successfully suppressed the current collapse phenomenon in AlGaN/GaN HEMTs. RF output power densities of 6.9 W/mm at 2.3 GHz and ${>}8.9$ W/mm at 4 GHz were achieved for AlGaN/GaN HEMTs on Si and SiC substrates, respectively.
- 2010-04-25
著者
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HER Jin-Cherl
School of Electrical Engineering, Seoul National University
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YOO Chan-Sei
School of Electrical Engineering and Computer Science from Seoul National University
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Chan-Sei Yoo
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Jae-Eung Oh
School of Electrical Engineering and Computer Science, Hanyang University, Ansan 426-791, Korea
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Ho-Young Cha
School of Electronic and Electrical Engineering, Hongik University, Seoul 121-791, Korea
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Cho Hyun-Jun
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Kwang-Seok Seo
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Hyun-Jun Cho
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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Her Jin-Cherl
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Jin-Cherl Her
School of Electrical Engineering, Seoul National University, Seoul 151-742, Korea
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