Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation
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概要
- 論文の詳細を見る
We have proposed and fabricated a lateral GaN Schottky barrier diode (SBD) that increases the breakdown voltage and decreases the leakage current by the oxidation of a Ni/Au Schottky contact. After an oxidation, the anode current was increased under a high anode bias, whereas the turn-on voltage was slightly increased. The leakage current was considerably decreased to less than 1 nA after the oxidations of 5 and 10 min. A high breakdown voltage of 750 V was measured in the proposed GaN SBD when multiple floating metal rings (FMRs) were used for edge termination and oxidation was employed. We have also measured the reverse recovery waveforms at room temperature and 125 °C and the fabricated GaN SBDs show very fast reverse recovery characteristics.
- 2006-04-30
著者
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Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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HER Jin-Cherl
School of Electrical Engineering, Seoul National University
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Lim Ji-yong
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Seo Kwang-seok
School Of Electrical Engineering And Computer Science Seoul National University
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Lee Seung-chul
School Of Electrical Engineering #50 Seoul National University
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Lim Ji-Yong
School of Electrical Engineering, Seoul National University, Shillim-dong, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Ha Min-Woo
School of Electrical Engineering, Seoul National University, Shillim-dong, Seoul 151-742, Korea
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Seo Kwang-Seok
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Lee Seung-Chul
School of Electrical Eng., Seoul Nat'l Univ., Shinlim-dong, Kwanak-ku, #50, 301-1115, Seoul 151-742, Korea
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Her Jin-Cherl
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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