A New Poly-Si TFT Employing Air-Cavities at the Edge of Gate Oxide Reducing Gate Induced Drain Leakage Current
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概要
- 論文の詳細を見る
We have proposed and fabricated two new poly-Si TFTs in order to reduce vertical and lateral electric field near the drain respectively. Vertical electric field is reduced by air-cavity at the edge of gate oxide and lateral electric field is reduced by selectively doped region in the channel. Due to the reduced Vertical and lateral electric field near the drain, the leakage current of both new poly-Si TFTs is considerably suppressed and device stability is also improved.
- 社団法人電子情報通信学会の論文
- 2000-10-13
著者
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Han Min-koo
School Of Electrical Engineering Seoul National University
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Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
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Lee Min-cheol
School Of Electrical Engineering Seoul National University
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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