The effect of interface trap charges on poly-Si TFT

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概要

• 論文の詳細を見る

• It is presented that the band mobility of polycrystalline silicon thin film transistor is mostly governed by the interface traps in case of the same grain size and that the mobility contains the parameter related with interface traps. Our proposed model includes parameters related with interface trap charges as well as grain boundary trap charges. The new method successfully explains that the large interface trap degrades the mobility. It is also possible to extract the interface trap charges from I-V transfer characteristics using our new model.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• Lee Min-Cheol

  School of Electrical Engineering, Seoul National University

• Han Min-Koo

  School of Electrical Engineering, Seoul National University

• Han Min-koo

  School Of Electrical Engineering And Computer Science #50 Seoul National University

• Lee J‐h

  School Of Electrical Engineering #032 Seoul National University

• Lee J‐h

  Division Of Materials Science And Engineering Korea University

• LEE Jae-Hoon

  School of Electrical Engineering & Computer Science Kyungpook National University

• Moon Kook

  School Of Electrical Engineering Seoul National University

• Lee Min-Chul

  School of Electrical Engineering, Seoul National University

• Lee Jin-hee

  School Of Electrical Engineering Seoul National University

• Han Min-koo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

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