Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
-
Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
-
Han M‐k
Seoul Nat'l Univ. Seoul Kor
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