A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed

スポンサーリンク

概要

• 論文の詳細を見る
• 1998-09-07

著者

• Kim Dong-hyun

  Td Team R&d Center Samsung Electronics Co.ltd.

• Kim Doo-young

  School Of Electrical Eng. Seoul National Univ.

• Choi Y‐i

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Lee B‐h

  Inha Univ. Inchon Kor

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• Han Min-Koo

  School of Electrical Engineering, Seoul National University

• Han Min-koo

  School Of Electrical Engineering And Computer Science #50 Seoul National University

• CHOI Yearn-Ik

  School of Electrical Eng. & Computer Science #50, Seoul National University

• LEE Byeong-Hoon

  School of Electrical Eng., Seoul Nat'l University

• BYEON Dae-Seok

  School of Electrical Eng., Seoul Nat'l University

• Kim D‐y

  Department Of Veterinary Pathology College Of Veterinary Medicine Seoul National University And Scho

• Choi Yearn-ik

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• CHUN Jung-Hoon

  School of of Electrical Eng., Seoul Nat'l Univ.

• Chun Jung-hoon

  School Of Of Electrical Eng. Seoul Nat'l Univ.

• Byeon Dae-seok

  School Of Electrical Engineering Seoul National University

• Choi Young-hwan

  School Of Electrical Eng. Seoul Nat'l Univ.

• Han Min-koo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

関連論文

• Hwanggunchungyitang Prevents Cadmium-Induced Ototoxicity through Suppression of the Activation of Caspase-9 and Extracellular Signal-Related Kinase in Auditory HEI-OC1 Cells(Pharmacology)
• Serotonin Depletion Enhances the Intracerebroventricularly Administered MK-801-Induced Plasma Interleukin-6 Levels in Mice
• Inhibitory Effect of Chunghyuldan in Prostaglandin E2 and Nitric Oxide Biosynthesis of Lipopolysaccharide-Induced RAW 264.7 Cells(Pharmacognosy)
• Metabolic Activities of Ginsenoside Rb1, Baicalin, Glycyrrhizin and Geniposide to Their Bioactive Compounds by Human Intestinal Microflora(Pharmacognosy)
• Daio-Orengedokuto Inhibits HMG-CoA Reductase and Pancreatic Lipase
• New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
• A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
• A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
• New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
• New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
• Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
• Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
• Gate-Overlapped Lightly Doped Drain Poly-Si Thin Film Transistors by Employing Low-Temperature Doping Techniques
• Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
• Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
• New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
• A Characteristics of Buried Channel Poly-Si TFTs
• In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
• A Novel LDD-Structured Poly-Si Thin Film Transistors with High ON/OFF Ratio
• Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
• Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
• Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
• Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
• Breakdown Characteristics of SF_6 Gap Disturbed by a Metallic Protrusion under Oscillating Transient Overvoltages
• V-t Characteristics of SF6 Gap Disturbed by a Needle-Shaped Protrusion under Oscillating Transient Overvoltages
• 若齢犬の悪性中皮腫の一例(短報)
• Overexpression of Urokinase-type Plasminogen Activator in Human Gastric Cancer Cell Line (AGS) Induces Tumorigenicity in Severe Combined Immunodeficient Mice
• 免疫不全マウスにおける肝吸虫寄生の経過ならびに病理変化
• A New Insulated Gate Bipolar Transistor Structure employing an Embedded Over-current Protection Device
• Increase of Breakdown Voltage in AlGaN/GaN HEMTs by Employing As+ Ion Implantation on SiO_2 Passivation Layer
• Hot-Carrier Stress Effects on AlGaN/GaN HEMTs Employing 500℃ Oxidized Ni/Au Gate
• SiO2 passivation effects on the leakage current in AlGaN/GaN high-electron-mobility transistors employing additional Schottky gate (Special issue: Solid state devices and materials)
• New field plate structure for suppression of leakage current of AlGaN/GaN high electron mobility transistors (Special issue: Solid state devices and materials)
• A new silicon-on-insulator lateral insulated gate bipolar transistor and lateral diode employing the separated schottky anode for a power integrated circuit (Special issue: Solid state devices and materials)
• A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs
• SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
• A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit
• A New 1200V PT-IGBT with Protection Circuit employing the Lateral IGBT and Floating p-well Voltage Sensing Scheme
• Suppression of Leakage Current of Ni/Au Schottky Barrier Diode Fabricated on AlGaN/GaN Heterostructure by Oxidation (Special Issue: Solid State Devices & Materials)
• New Inductively Coupled Plasma-Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors (Special Issue: Solid State Devices & Materials)
• A New Protection Circuit for improving Short-Circuit Withstanding Capability of Lateral Emitter Switched Thyristor (LEST)
• Experimental study on Improving Unclamped Inductive Switching Characteristics of the New Power MOSFET Employing Deep Body Contact
• Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
• A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
• AlGaN/GaN High-Electron-Mobility Transistor Employing an Additional Gate for High-Voltage Switching Applications
• A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
• Pulsed IVT Characteristics of AlGaN/GaN HEMT on the Isothermal Conditions
• A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
• Increase of Caspase-3 Activity by Lignans from Machilus thunbergii in HL-60 Cells(Pharmacognosy)
• Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
• Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
• Self-Aligned Offset Gated Poly-Si TFTs by Employing a Photo Resistor Reflow Process
• In-Situ Doped CMOS Polysilicon Thin Film Transistors
• Polysilicon Thin Film Transistors with PN Junction Gate
• Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
• Dual-Gate Shorted Anode SOI Lateral Insulated Gate Bipolar Transistor Suppressing the Snap-Back
• A New Dual-Gate SOI LIGBT with the Shorted Anode
• Physical Properties of Radiation Fields Produced by Multiple In-cloud Lightning Discharges
• Statistical Analysis of Electric and Magnetic Fields due to Multiple Cloud Lightning Discharges
• A Insitu Vacuum Encapsulated Novel Lateral Field Emitter Triode with Titanium Cathode
• Inhibitory Effects of Long-Term Administration of Ferulic Acid on Microglial Activation Induced by Intracerebroventricular Injection of β-Amyloid Peptide (1-42) in Mice(Pharmacology)
• Inhibition of Intracerebroventricular Injection Stress-Induced Plasma Corticosterone Levels by Intracerebroventricularly Administered Compound K, a Ginseng Saponin Metabolite, in Mice
• Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
• Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
• Invited Effects of WSix-Polycide Gate Processes on MOSFET Reliability and Characteristics (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
• A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
• 5-Hydroxy-7-(4'-hydroxy-3'-methoxyphenyl)-1-phenyl-3-heptanone : A Pancreatic Lipase Inhibitor Isolated from Alpinia officinarum(Pharmacognosy)
• 3-Methylethergalangin Isolated from Alpinia officinarum Inhibits Pancreatic Lipase
• Anti-complement Activity of Constituents from the Stem-Bark of Juglans mandshurica
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Post-annealing Effects on the Characteristics of Poly-Si TFT's
• Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
• Preparation of Ultrafine Crystalline TiO_2 Powders from Aqueous TiCl_4 Solution by Precipitation
• Sintering and Electrical Properties of (CeO_2)_(Gd_2O_3)_ Powders Prepared by Glycine-Nitrate Process for Solid Oxide Fuel Cell Applications
• A new 1200V punch through-insulated gate bipolar transistor with protection circuit employing lateral insulated gate bipolar transistor and floating p-well voltage sensing scheme (Special issue: Solid state devices and materials)
• A New 600V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection
• A New Protective Circuit to Improve Short-Circuit Withstanding Capability of a Lateral Emitter Switched Thyristor (Special Issue: Solid State Devices & Materials)
• Experimental Study on Improving Unclamped Inductive Switching Characteristics of the New Power Metal Oxide Semiconductor Field Effect Transistor Employing Deep Body Contact (Special Issue: Solid State Devices & Materials)
• Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
• A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
• A New Junction Termination in Power Semiconductor Devices employing Trench
• ハムスター卵円形細胞の肝吸虫感染による分化
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
• Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
• A Hybrid Lateral SOI BMFET with High Current Gain
• 韓国における牛流産の原因調査(病理学)
• Variation of the Preferred Orientation with Thickness in Barium Titanate Thin Films Prepared by Pulsed Laser Deposition
• Effect of Ambient Gas Pressure on the Preferred Orientation of Barium Titanate Thin Films Prepared by Pulsed Laser Deposition
• Expression Profile of Histone Deacetylase 1 in Gastric Cancer Tissues
• マンドリルの乳腺腺癌(短報)(病理学:)
• ジエチルニトロサミンと2-アセチルアミノフルオレン投与ハムスターからの肝臓卵形細胞の分離
• Linear Birefringence Study on the Phase Transition of K_2TeO_3
• A New Lateral Dual-Gate Thyristor with Current Saturation
• A New Junction Termination in Power Semiconductor Devices employing Trench
• Latch-up Suppressed Insulated Gate Bipolar Transistor by the Deep p^+ Ion Implantation under the n^+ Source
• A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well

もっと見る 閉じる

スポンサーリンク