Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
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概要
- 論文の詳細を見る
We investigated the effects on the MOSFET reliability and characteristics for the optimum MS-WSi_x and DCS-WSi_x gate stack formation in DRAM(Dynamic Random Access Memory) fabrication. MS-WSi_x gate with RTA(Rapid Thermal Annealing) process shows good gate-induced drain leakage(GIDL) current, hot-carrier lifetime, hot-carrier effect(HCE) immunity, and off-state leakage characteristics in compared with DCS-WSi_x gate with RTA process. The cause of these results is mainly large interface trap generation in DCS- WSi_x gate incorporated with Fluorine effect. And it is confirmed that MS-WSi_x gate MOSFETs have better drive capability than DCS-WSi_x gate MOSFETs at the same electrical gate oxide thickness
- 社団法人電子情報通信学会の論文
- 2001-06-28
著者
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Oh Yong-chul
Td Team R&d Center Samsung Electronics Co.ltd.
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Kim Dong-hyun
Td Team R&d Center Samsung Electronics Co.ltd.
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Kim Doo-young
School Of Electrical Eng. Seoul National Univ.
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Kim J‐y
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Nam In-ho
Td Team R&d Center Samsung Electronics Co.ltd.
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Jang Se-myeong
Td Team R&d Center Samsung Electronics Co.ltd.
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Man Yoon-jae
Td Team R&d Center Samsung Electronics Co.ltd.
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Lee Sang-hyun
Td Team R&d Center Samsung Electronics Co.ltd.
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Kim Jin-Yang
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Hyun Kyu-Taek
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Seo Hyoung-Woen
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Won Dae-Joong
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Jeong Moon-Mo
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Lee Yun-Jae
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Sun Ho-Won
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Lee Chang-Huhn
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Kim Hyun-Chang
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Kim Chang-Kyu
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Yoshida Makoto
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Jin Gyo-Yong
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Lee Won-Seong
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Yang W-
TD Team, R&D Center, Samsung Electronics Co.Ltd.
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Jeong Moon-mo
Td Team R&d Center Samsung Electronics Co.ltd.
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Lee W‐s
名古屋大 大学院工学研究科
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Kim D‐h
College Of Pharmacy Kyung-hee University
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Lee Won-seong
Td Team R&d Center Samsung Electronics Co.ltd.
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Kim D‐h
Department Of Psychiatry College Of Medicine Institute Of Natural Medicine Hallym University
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Kim J‐y
Department Of Materials Engineering Hanyang University
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Kim Jin-yang
Td Team R&d Center Samsung Electronics Co.ltd.
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Kim Hyun-chang
Td Team R&d Center Samsung Electronics Co.ltd.
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Jin Gyo-yong
Td Team R&d Center Samsung Electronics Co.ltd.
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Hyun Kyu-taek
Td Team R&d Center Samsung Electronics Co.ltd.
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Won Dae-joong
Td Team R&d Center Samsung Electronics Co.ltd.
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Kim Chang-kyu
Td Team R&d Center Samsung Electronics Co.ltd.
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Lee Chang-huhn
Td Team R&d Center Samsung Electronics Co.ltd.
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Seo Hyoung-woen
Td Team R&d Center Samsung Electronics Co.ltd.
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Lee Yun-jae
Td Team R&d Center Samsung Electronics Co.ltd.
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Lee Y‐j
Korea Advanced Inst. Sci. And Technol. Taejon Kor
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Yoshida Makoto
Td Team R&d Center Samsung Electronics Co.ltd.
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