Formation of Ti-capped NiSi and its Barrier Properties against Cu Diffusion

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概要

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• The formation of NiSi with the Ti capping layer to improve the thermal stability and the feasibility for utilizing this Ti-capping layer as a barrier against Cu diffusion were investigated. It was found that the Ti capping layer suppressed the Ni diffusion, and thus the agglomeration of NiSi films and the formation of NiSi_2 phase, leading to the better thermal stability. Furthermore, the Ti-capping or TiN layer inhibited the Cu diffusion. However, NiSi dissociated due to the presence of Cu and then Ni diffused into the Cu layer.

• 社団法人電子情報通信学会の論文
• 2002-06-24

著者

• Kim J‐y

  Pohang Univ. Sci. And Technol. Kyungbuk Kor

• LEE Keun-Woo

  Department of Veterinary Internal Medicine, College of Veterinary Medicine, Kyungpook National Unive

• Kim Ju-youn

  Department Of Materials Engineering Hanyang University

• Kim J‐y

  Department Of Materials Engineering Hanyang University

• Bae Kyoo-sik

  Department Of Electronic Materials Engineering The University Of Suwon

• Lee Keun-woo

  Department Of Electronic Materials Engineering The University Of Suwon

• Lee Keun-woo

  Department Of Veterinary Internal Medicine College Of Veterinary Medicine Kyungpook National Univers

• Park Soo-Jin

  Department of Electronic Materials Engineering, The University of Suwon

• Park S‐j

  Department Of Electronic Materials Engineering The University Of Suwon

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