Fabrication of hyperboloid drum structures for photonic quantum ring nano-lasers using chemically assisted ion beam etching
スポンサーリンク
概要
- 論文の詳細を見る
We report characteristics of fabricated hyperboloid drum structures for electro-pumped quantum ring nano-lasers using chemically assisted ion beam etching with Ar: Cl_2: BCl_3 = 5: 2: 3 sccm, the substrate temperature 20-60 ℃ and at a large tilt angle = 50° for various etching modes. The active region diameters, the etched waist of 〜 8 μm-tall hyperboloid drum (the sidewall angle = 15-25°), can be adjusted down to 〜 0.1 μm for the single quantum ring definition.
- 社団法人電子情報通信学会の論文
- 2002-06-26
著者
-
Kwon O'dae
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Kim J‐y
Pohang Univ. Sci. And Technol. Kyungbuk Kor
-
Kim Jun-Youn
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
An Sung-Jae
Department of Electronic and Electrical Engineering, Pohang University of Science and Technology
-
Kim Ju-youn
Department Of Materials Engineering Hanyang University
-
Kim J‐y
Department Of Materials Engineering Hanyang University
-
An Sung-jae
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
-
Kim Jun-youn
Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology
関連論文
- Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
- Effects of WSi_X-Polycide Gate Processes on MOSFET Reliability and Characteristics
- Invited Effects of WSix-Polycide Gate Processes on MOSFET Reliability and Characteristics (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
- Fabrication of hyperboloid drum structures for photonic quantum ring nano-lasers using chemically assisted ion beam etching
- Fabrication of hyperboloid drum structures for photonic quantum ring nano-lasers using chemically assisted ion beam etching
- Formation of Ti-capped NiSi and its Barrier Properties against Cu Diffusion
- Formation of Ti-capped NiSi and its Barrier Properties against Cu Diffusion
- Low-Temperature Epitaxial Growth of Cubic Silicon Carbide on Si(100) for Submicron-Pattern Fabrication