Low-Temperature Epitaxial Growth of Cubic Silicon Carbide on Si(100) for Submicron-Pattern Fabrication

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概要

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• SiC films were selectively grown on patterned SiO2/Si(100) substrates using supersonic molecular jet epitaxy. For film growth, we employed methylsilane seeded in a carrier gas (He or H2) as a reactant gas. Due to the high translational kinetic energy of methylsilane molecules in the supersonic jet, the growth temperature was as low as 670°C. The reduction of the growth temperature is explained in terms of a decrease in the activation energy and enhancement of the reaction efficiency from methylsilane to the SiC film during film growth. More importantly, a high growth rate of SiC at low temperature yielded submicron patterns of SiC without degradation of the SiO2 mask.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-15

著者

• Yi Gyu-chul

  Department Of Materials Science And Engineering Pohang University Of Science And Techno1ogy

• An Sung-jae

  Department Of Electronic And Electrical Engineering Pohang University Of Science And Technology

• Yi Gyu-Chul

  Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

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