A New Conductivity Modulated LDMOSFET Employing Buried P Region and P^+ Drain
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
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Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
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Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Y‐i
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han M‐k
Seoul Nat'l Univ. Seoul Kor
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Han Min-Koo
School of Electrical Engineering, Seoul National University
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Oh J‐k
Seoul National Univ. Seoul Kor
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Han Min-koo
School Of Electrical Engineering And Computer Science #50 Seoul National University
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JEON Byung-Chul
School of Electrical Eng. & Computer Science #50, Seoul National University
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CHOI Yearn-Ik
School of Electrical Eng. & Computer Science #50, Seoul National University
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OH Jae-Keun
School of Electrical Engineering #50, Seoul National University
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Oh Jae-keun
School Of Electrical Eng. #50 Seoul National University
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Jeon Byung-chul
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Choi Young-hwan
School Of Electrical Eng. Seoul Nat'l Univ.
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Han Min-koo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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