New Inductively Coupled Plasma–Chemical Vapor Deposition SiO2 Passivation for High-Voltage Switching AlGaN/GaN Heterostructure Field-Effect Transistors
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概要
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A new inductively coupled plasma–chemical vapor deposition (ICP–CVD) SiO2 passivation for high-voltage switching AlGaN/GaN heterostructure field-effect transistors (HFETs) is proposed to increase the breakdown voltage and forward drain current. The AlGaN/GaN HFETs are fabricated and measured before and after the passivation. The measured off-state breakdown voltage of the passivated device is 455 V, whereas that of the unpassivated device is 282 V. The forward drain currents of the passivated devices are increased by 20–35% because the two-dimensional electron gas (2DEG) concentration is increased and the electron injections to the surface states are decreased.
- 2006-04-30
著者
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Ha Min-woo
School Of Electrical Eng. & Computer Science #50 Seoul National University
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HER Jin-Cherl
School of Electrical Engineering, Seoul National University
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Seo Kwang-seok
School Of Electrical Engineering And Computer Science Seoul National University
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Lee Seung-chul
School Of Electrical Engineering #50 Seoul National University
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Han Min-Koo
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Ha Min-Woo
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Seo Kwang-Seok
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Lee Seung-Chul
School of Electrical Eng., Seoul Nat'l Univ., Shinlim-dong, Kwanak-ku, #50, 301-1115, Seoul 151-742, Korea
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Lee Seung-Chul
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Her Jin-Cherl
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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