New Fraction Time Annealing Method For Improving Organic Light Emitting Diode Current Stability of Hydorgenated Amorphous Silicon Thin-Film Transistor Based Active Matrix Organic Light Emitting Didode Backplane

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概要

• 論文の詳細を見る

• We propose and fabricate a new hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) pixel employing a fraction time annealing (FTA), which can supply a negative gate bias during a fraction time of each frame rather than the entire whole frame, in order to improve the organic light emitting diode (OLED) current stability for an active matrix (AM) OLED. When an electrical bias for an initial reference current of 2 μA at 60 °C is applied to an FTA-driven pixel more than 100 h and the temperature is increased up to 60 °C rather than room temperature, the OLED current is reduced by 22% in the FTA-driven pixel, whereas it is reduced by 53% in a conventional pixel. The current stability of the proposed pixel is improved, because the applied negative bias can suppress the threshold voltage degradation of the a-Si:H TFT itself, which may be attributed to hole trapping into SiNx. The proposed fraction time annealing method can successfully suppress $V_{\text{th}}$ shift of the a-Si:H TFT itself due to hole trapping into SiNx induced by negative gate bias annealing.

• 2007-03-30

著者

• Jeon Jae-Hong

  School of Electrical Engineering, Seoul National University

• LEE Jae-Hoon

  School of Electrical Engineering & Computer Science Kyungpook National University

• Han Min-koo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Park Sang-Geun

  School of Electrical Engineering (#50), Seoul National University, San 56-1, Gwanak-gu, Seoul 151-742, Korea

• Huh Jong-moo

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

• Lee Jae-Hoon

  School of Electrical Engineering and Computer Science #50, Seoul National University, Seoul, Korea

• Goh Joon-chul

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

• Choi Joonhoo

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

• Chung Kyuha

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

• Goh Joon-chul

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

• Chung Kyuha

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

• Han Min-Koo

  School of Electrical Engineering and Computer Science #50, Seoul National University, Seoul, Korea

• Jeon Jae-Hong

  School of Electronics, Hankuk Aviation University, Gyeonggi-do, Korea

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

• Choi Joonhoo

  LCD R&D Center, Samsung Electronics Co., Ltd., Korea

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