A New 600 V Punch Through-Insulated Gate Bipolar Transistor with the Monolithic Fault Protection Circuit Using the Floating p-Well Voltage Detection

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概要

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• A new fault sensing scheme of the insulated gate bipolar transistor (IGBT) employing the floating p-well, which detects the over-voltage of the floating p-well under the short circuit fault condition, is proposed and implemented by fabricating the main IGBT and gate voltage pull-down circuit using the widely used planar IGBT process. The floating p-well structure also improves the avalanche energy of IGBT in addition to detecting the fault signal. The detection of fault and gate voltage pull-down operation is achieved by the proposed fault protection scheme employing the floating p-well voltage detection. The proposed fault protection circuit was measured under the hard switching fault (HSF) and fault under load (FUL) conditions. The normal switching behavior of the main IGBT with the proposed protection circuit was also investigated under inductive load switching conditions.

• 2006-10-15

著者

• Ha Min-woo

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• JEON Byung-Chul

  School of Electrical Eng. & Computer Science #50, Seoul National University

• Ji In-hwan

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Choi Young-hwan

  School Of Electrical Eng. & Computer Science #50 Seoul National University

• Han Min-Koo

  School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea

• Han Min-Koo

  School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea

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