Post-annealing Effects on the Characteristics of Poly-Si TFT's
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概要
- 論文の詳細を見る
The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing, excimer laser annealing and two-step annealing. Two-step annealing, which is the combination of furnace annealing at 600 ℃ for 24h and the sequential furnace annealing at 950 ℃/1h or the excimer laser annealing, is found to reduce the in-grain defects significantly without changing the grain boundary structure. As a consequence, the performance of the poly-Si thin film transistors (TFT's) produced by employing the two-step annealing has been improved remarkably if compared with those of one-step annealing.
- 社団法人映像情報メディア学会の論文
- 1995-10-23
著者
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Han M‐k
The Author Is With The School Of Electrical Engineering Seoul National University
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Choi K‐y
Seoul National Univ. Seoul Kor
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Han M‐k
Seoul Nat'l Univ. Seoul Kor
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Kim Yong-sang
Department Of Electrical Engineering Myongji University
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