Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• Han M‐k

  The Author Is With The School Of Electrical Engineering Seoul National University

• Park C‐m

  Samsung Electronics Co. Ltd. Kyungki‐do Kor

• Kim Chun-hong

  School Of Electrical Engineering Seoul National University

• Han M‐k

  Seoul Nat'l Univ. Seoul Kor

• JEON Jae-Hong

  The author is with the School of Electrical Engineering, Seoul National University

• JEON Jae-Hong

  Room 1102, School of Electrical Engineering, Seoul National University

• PARK Cheol-Min

  Room 1102, School of Electrical Engineering, Seoul National University

• YOO Juhn-Suk

  Room 1102, School of Electrical Engineering, Seoul National University

• KIM Cheon-Hong

  Room 1102, School of Electrical Engineering, Seoul National University

• HAN Min-Koo

  Room 1102, School of Electrical Engineering, Seoul National University

• Jeon J‐h

  Seoul National Univ. Seoul Kor

• Yoo Juhn-suk

  The Author Is With The School Of Electrical Engineering Seoul National University

• Kim Cheon-hong

  School Of Electrical Engineering Seoul National University

• Park Cheol-min

  School Of Electrical Engineering Seoul National University

• Park Cheol-min

  Room 1102 School Of Electrical Engineering Seoul National University

• Jun Jae-hong

  Department Of Electrical Engineering Seoul National University

• Jun Jae

  School Of Electrical Engineeririg Seoul National University

• Yoo Juhn-suk

  Department Of Electrical Engineering Seoul National University

• Yoo Juhn

  School Of Electrical Engineeririg Seoul National University

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