30nm Triple-Gate In_<0.7>GaAs HEMTs Fabricated by Damage-Free SiO_2/SiN_x Sidewall Process and BCB Planarization

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概要

• 論文の詳細を見る
• 2004-04-30

著者

• Kim Dae-hyun

  School Of Electrical Engineering And Computer Science Seoul National University

• SEO Kwang-Seok

  School of Electrical Engineering, Seoul National University

• LEE Jae-Hak

  WAVICS Inc.

• YEON Seong-Jin

  School of Electrical Engineering and Computer Science, Seoul National University

関連論文

• SiO_2 Passivation Effects on the Leakage Current in Dual-Gate AlGaN/GaN High Electron Mobility Transistors
• Suppression of the leakage current of a Ni/Au Schottky Barrier Diode fabricated on AlGaN/GaN hetero-structure by oxidation
• A New ICP-CVD SiO_2 Passivation for High Voltage Switching AlGaN/GaN HFETs
• A Dual Gate AlGaN/GaN HEMT For High Voltage Switching Applications
• Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
• A New Junction Termination in Power Semiconductor Devices employing Trench
• Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current
• Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
• 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate
• A New Junction Termination in Power Semiconductor Devices employing Trench
• 30nm Triple-Gate In_GaAs HEMTs Fabricated by Damage-Free SiO_2/SiN_x Sidewall Process and BCB Planarization
• A Compact Ultrawide Bandpass Filter on Thin-Film Substrate(Recent Technologies for Microwave and Millimeter-wave Passive Devices)
• 30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization

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