Kim Dae-hyun | School Of Electrical Engineering And Computer Science Seoul National University
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概要
関連著者
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Kim Dae-hyun
School Of Electrical Engineering And Computer Science Seoul National University
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SEO Kwang-Seok
School of Electrical Engineering, Seoul National University
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Seo Kwang-seok
School Of Electrical Engineering And Computer Science Seoul National University
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Seo Kwang-Seok
School of Electrical Engineering #50, Seoul National University, Shinlim-dong, Gwanak-gu, Seoul 151-742, Korea
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Choi Woo-young
Department Of Electrical And Computer Engineering Yonsei University
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Kim Dae-hyun
School Of Electrical Engineering Seoul National University
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LEE Jae-Hak
WAVICS Inc.
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Choi Chang-soon
Department Of Electrical And Computer Engineering Yonsei University
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Lee Jae-hak
Wavics Co. Ltd.
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Seo Kwang-seok
School Of Electrical Engineering Seoul National University
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KANG Hyo-Soon
Department of Electrical and Electronic Engineering, Yonsei University
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Kang Hyo-soon
Department Of Electrical And Electronic Engineering Yonsei University
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YEON Seong-Jin
School of Electrical Engineering and Computer Science, Seoul National University
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Yeon Seong-jin
School Of Electrical Engineering And Computer Science Seoul National University
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Choi Chang-soon
Department Of Electrical And Electronic Engineering Yonsei University
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Yeon Seong-Jin
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea
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Kim Dae-Hyun
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea
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Lee Jae-Hak
WAVICS, Co., Ltd., F8 Telson Venture Tower, 949-3 Dokok-dong, Kangnam-ku, Seoul, Korea
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Seo Kwang-Seok
School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanak-ku, Seoul 151-742, Korea
著作論文
- 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate
- 30nm Triple-Gate In_GaAs HEMTs Fabricated by Damage-Free SiO_2/SiN_x Sidewall Process and BCB Planarization
- 30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization