Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition
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概要
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We studied the transport characteristics of ZnO grown by metal organic chemical vapor deposition (MOCVD) at temperatures between 200 and 500 °C. The crystal quality, measured by X-ray diffraction, improved as the growth temperature increased. However, the mobility measured in the thin-film transistor (TFT) decreased in films grown at higher temperatures. In our experiments, a ZnO TFT grown at 250 °C showed good electrical characteristics, with a 13 cm2 V-1 s-1 mobility and a $10^{3}$ on/off ratio. We conclude that hydrogen incorporated during MOCVD growth plays an important role in determining the transistor characteristics. This was supported by results of secondary ion mass spectroscopy (SIMS), where a higher hydrogen concentration was observed in films grown at lower temperatures.
- 2007-04-30
著者
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SEO Ogweon
NFC, Samsung Advanced Institute of Technology
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Jo Jungyol
Department Of Electrical And Computer Engineering Ajou University
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Choi Yearn-ik
Department Of Electrical Science Korea Advanced Institute Of Science And Technology
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Seo Hyunseok
Department Of Electrical And Computer Engineering Ajou University
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Seo Hyunseok
Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Korea
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Seo Ogweon
NFC, Samsung Advanced Institute of Technology, Suwon 440-600, Korea
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Jeong Euihyuk
Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Korea
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Lee Byeongon
CDA Co., Ltd., Yangjaedong, Seoul 137-893, Korea
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Jo Jungyol
Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Korea
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Choi Yearn-Ik
Department of Electrical and Computer Engineering, Ajou University, Suwon 443-749, Korea
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