Choi Sung-hwan | School Of Advanced Materials Engineering Andong National University
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関連著者
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Choi Sung-hwan
School Of Advanced Materials Engineering Andong National University
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Han Min-Koo
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Mo Yeon-Gon
Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Gyeonggi 446-711, Korea
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Kim Hye-Dong
Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Gyeonggi 446-711, Korea
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Shin Hee-Sun
School of Electrical Engineering #50, Seoul National University, 151-742 Seoul, Korea
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Kim Hye-Dong
Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Gyeonggi 446-711, Korea
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Lee Kee-ahn
School Of Advanced Materials Engineering Andong National University
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Lee Kee-ahn
School Of Advanced Materials Engineering Andong National Univ.
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Choi Hyun-joo
University Of Central Florida Orlando Ampac
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CHOI Sung-Hwan
School of Advanced Materials Engineering, Andong National University
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SUNG Si-Young
Material Processing Engineering Center, Korea Automotive Technology Institute
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SOHN Young-Ho
University of Central Florida, Orlando, AMPAC
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HAN Bum-Suck
Material Processing Engineering Center, Korea Automotive Technology Institute
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Han Bum-suck
Material Processing Engineering Center Korea Automotive Technology Institute
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Sohn Young-ho
University Of Central Florida Orlando Ampac
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Sung Si-young
Material Processing Engineering Center Korea Automotive Technology Institute
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Yeon-Gon Mo
Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Kyeonggi-do 446-711, Korea
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Mo Yeon-Gon
Corporate R&D Center, Samsung SDI Co., Ltd., Yongin, Kyeonggi-do 446-577, Korea
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Sun-Jae Kim
School of Electrical Engineering and Computer Science #50, Seoul National University, Gwanak 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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Kim Sun-Jae
School of Electrical Engineering (#50), Seoul National University, San 56-1, Gwanak-gu, Seoul 151-742, Korea
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Min-Koo Han
School of Electrical Engineering and Computer Science #50, Seoul National University, Gwanak 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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Han Min-Koo
School of Electrical Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Sung-Hwan Choi
School of Electrical Engineering and Computer Science #50, Seoul National University, Gwanak 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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Choi Sung-Hwan
School of Electrical al Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Choi Sung-Hwan
School of Electrical Engineering and Computer Science #50, Seoul National University, Seoul 151-742, Korea
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Choi Sung-Hwan
School of Electrical Engineering and Computer Science #50, Seoul National University, Gwanak_599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
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Hye-Dong Kim
Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Kyeonggi-do 446-711, Korea
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Hye-Dong Kim
Corporate R&D Center, Samsung Mobile Display Co., Ltd., Yongin, Kyeonggi-do 446-711, Korea
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Kim Hye-Dong
Corporate R&D Center, Samsung SDI Co., Ltd., Yongin, Kyeonggi-do 446-577, Korea
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Choi Sung-Hwan
School of Electrical Engineering and Computer Science #50, Seoul National University, Gwanak 599 Gwanak-ro, Gwanak-gu, Seoul 151-742, Korea
著作論文
- Novel Multiple-Channel Polycrystalline Silicon Thin-Film Transistors Employing Asymmetric Spacing
- New Bidirectional T-Shaped Triple-Gate n-Type Polycrystalline Silicon Thin-Film Transistors Formed by Low-Temperature Sequential Lateral Solidification Process to Reduce of Kink Effects
- Bias-Temperature- and Light-Induced Instability in Short-Channel ($L = 1.5$ μm) p-Type Polycrystalline Silicon Thin-Film Transistors on Glass Substrates
- Reliability in Short-Channel p-Type Polycrystalline Silicon Thin-Film Transistor under High Gate and Drain Bias Stress
- High-Temperature Tensile Deformation Behavior of New Heat Resistant Aluminum Alloy
- Hot-Carrier Effects in Short Channel (L = 1.5μm) p-Type Polycrystalline Silicon Thin-Film Transistors
- Novel F-Shaped Triple-Gate Structure for Suppression of Kink Effect and Improvement of Hot Carrier Reliability in Low-Temperature Polycrystalline Silicon Thin-Film Transistor
- Positive Shift of Threshold Voltage in Short-Channel ($L = 1.5$ μm) p-Type Polycrystalline Silicon Thin-Film Transistor under Off-State Bias Stress
- Effect of Dynamic Bias Stress in Short-Channel (L=1.5 μm) p-Type Polycrystalline Silicon Thin-Film Transistors