RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
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概要
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In this paper, we developed the RF MEMS switch using the pull-up structure for high long-term reliability and low actuation voltage. To achieve the high long-term reliability and low actuation voltage, the RF MEMS switch adopted the pull-up structure using the movable contact pad, instead of cantilevers or fixed-fixed beams, because the movable contact pad was not deformed by electrostatic force. Reliable operations were demonstrated at a very low actuation voltage of 4.5V. After 23 billion cyclic actuations, the reliable actuation voltages smaller than 5V are obtained, while insertion loss and isolation are maintained below 0.51 and 55.0dB, respectively, at 50 GHz.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Lee Seong-dae
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Jun Byoung-chul
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Kim Sam-dong
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
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Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint)
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Lee Seong-Dae
Millimeter-wave Innovation Technology Research Center (MINT), Dongguk University
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