Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
スポンサーリンク
概要
- 論文の詳細を見る
Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance. We have studied MHEMTs using In_xGa_<1-x>As/In_<0.52>Al_<0.48>As (x>0.4) modulation-doped heterostructures on the GaAs wafer. For the device performance optimization, we first calibrated the device performance of 0.1-μm MHEMT fabricated in our research center using 2D device simulator. With these calibrated parameter set, the device performance has been investigated with varying the indium mole fraction from 0.4 to 0.65 in the channel layer. The device performances on the DC and RF characteristics exhibits better with increasing the indium mole fraction. The device with 0.65 mole fraction has shown the best RF characteristic. In this article, we show these results in detail, and optimized epitaxial structure for over-100-GHz millimeter-wave frequencies. Our newly designed device with x=0.65 mole fraction for better breakdown characteristic shows 341.41 mA/mm of maximum saturation current, 386.09 mS/mm of transconductance, 123.11 GHz of cut-off frequency, and 231.74 GHz of the maximum frequency of oscillation in our device simulation.
- 社団法人電子情報通信学会の論文
- 2003-06-23
著者
-
Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Lee Bok-hyoung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Son Myung-Sik
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University
-
Kim Mi-Ra
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University
-
Rhee Jin-koo
Millimeter-wave Innovation Technology Research Center (mint)
-
Kim Mi-ra
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Son Myung-sik
Millimeter-wave Innovaiton Technology Research Center Dongguk University
-
Son Myung-sik
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
関連論文
- 94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Silicon devices and materials)
- 94 GHz monolithic down-converter for FMCW radar sensor using metamorphic HEMTs (Electron devices)
- 94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
- 94 GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs(Session 3B : High Speed and High Frequency Applications 1)
- Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic HEMTs for the Millimeter-wave Applications(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Optimization Study on the Epitaxial Structures of Over-100-GHz Metamorphic : HEMTs for the Millimeter-wave Applications (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
- Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
- W-band single balanced mixer using high performance dot Schottky diode(Session8B: High-Frequency, Photonic and Sensing Devices)
- Reduced branch-line coupler using eight two-step stubs for W-Band application of MMIC(Session8B: High-Frequency, Photonic and Sensing Devices)
- The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
- Fabrication of low loss transmission line with Surface micromachining technology(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Fabrication of low loss transmission line with Surface micromachining technology (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
- Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher
- Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher
- Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP (Inductive Coupled Plasma) Etcher
- Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor
- RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II,AWAD2006)
- RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage(Session 8B Emerging Devices and Technologies II)
- An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
- An Analysis of the Kink Phenomena in GaAs-based Short-gate MHEMTs Using 2D Hydrodynamic Device Simulation(Session A2 Compound Semiconductor Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004)
- Studies on Modification of Channel Material and Gate Recess Structures in Metamorphic HEMT for Improvement of Breakdown and RF Characteristics
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Electrical Characteristics of the 0.1μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
- Development of GaAs Gunn Diodes and Their Applications to Frequency Modulated Continuous Wave Radar
- Simulation of sub-0.1μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Simulation of sub-0.1 μm T-gate Trilayer Process in HEMTs for Millimeter-wave Frequencies Using 50-kV and 100-kV Electron Beam Lithography System (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Design and Fabrication of Planar GaAs Gunn Diodes
- Electrical Characteristics of the 0.1 μm Gate Length Pseudomorphic High-Electron-Mobility Transistors with Low-Dielectric-Constant Benzo-Cyclo-Butene Passivations
- Radio Frequency Characteristics of Multifinger 0.1 μm Metamorphic High-Electron-Mobility Transistors Depending on Number of Gate Fingers and Gate Width
- The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
- Millimeter-Wave GaAs Surface Micromachined Bandpass Filters Using the External Quality Factor